PART |
Description |
Maker |
IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管) 500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
SG50N06D3S SG50N06D2S |
Discrete IGBTs
|
Sirectifier Global Corp. Sirectifier Semiconductors ETC[ETC] List of Unclassifed Manufacturers
|
IXBN42N170A |
Discrete IGBTs
|
IXYS
|
IRGBCX0U IRGPCX0U IRGPF50U |
(IRGxxxx) Discrete IGBTs
|
International Rectifier
|
GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
IRGPC50M |
Insulated Gate Bipolar Transistors (IGBTs)(??矾棰??瓒?揩???缂?????????朵?绠? 600V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
IXBH40N160 IXBH40N140 |
Discrete IGBTs High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
|
IXYS Corporation
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
ILA03N60 ILB03N60E3045A ILD03N60 ILP03N60 |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 FullPak IGBTs & DuoPacks - 3A / 600V LightMOS in TO263 IGBTs & DuoPacks - 3A / 600V LightMOS in DPak
|
Infineon
|
30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 800V 3A Ultra-Fast Discrete Diode in a SMC package 400V 3A Ultra-Fast Discrete Diode in a SMC package 600V 3A Ultra-Fast Discrete Diode in a SMC package 100V 3A Ultra-Fast Discrete Diode in a SMC package 200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp. IRF[International Rectifier] VISHAY SEMICONDUCTORS
|